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Silicon Carbide (SiC) Schottky Barrier Diode (SBD)-based Power Modules



  • 700V
  • 1200V
  • 1700V


  • Два диода
  • Пълен мост
  • Общ катод
  • Общ анод-катод
  • 3-фазен мост


SiC MOSFETs, SiC Schottky Barrier Diodes (SBDs) and paired them in SiC Power Modules offer:

  • Reduced costs
  • Improved system efficiency with lower switching losses
  • High-power density for smaller footprint to reduce size and weight
  • Higher operating temperature
  • 3× more thermally conductive than silicon
  • Reduced cooling needs, smaller filters and passives
  • Higher switching frequency
  • Ten times lower Failure In Time (FIT) rate, than comparable IGBTs at rated voltages
  • Extremely low parasitic (stray) inductance at < 2.9 nH in SiC modules
  • Wide range of 700V, 1200V and 1700V SiC products
  • Higher SiC power density vs. silicon enables smaller magnetics, transformers, filters and passives, resulting in a compact form factor


More information about MICROCHIP SiC products you can find here: Silicon Carbide (SiC) Devices and Power Modules


Development Tools:

The MSCSICPFC/REF5 is a 30 kW 3-Phase Vienna Power Factor Correction (PFC) reference design for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) charger and high-power switch mode power supply applications.

  • Designed for 30 kW applications
  • 98.6% efficiency at 30 kW output power.
  • 1200V Silicon Carbide (SiC) diodes and 700V SiC MOSFETs
  • 3-phase 380/400V RMS input voltage, 50 Hz or 60 Hz
  • 140 kHz switching frequency
  • 700V DC output voltage